Magnetic Storage Media Based on Tunnel Magnetic Junctions
Мykola Кrupa
Abstract
This paper analyzes the prospects for the use of magnetic information carriers based on magnetic tunnel junctions (MTJs), considers the main mechanisms of the effects of tunnel magnetoresistance (TMR) and tunnel magnetocapacitance (TMC) in MTJs, and presents the results of experimental studies of the influence of temperature and pulsed electric current density through tunnel magnetic contacts on the magnitude of the TMR and TMC coefficients in magnetic tunnel junctions Tb22Co5Fe73/Pr6O11/Tb19Co5Fe76 and Co80Fe20/Pr6O11/ Co30Fe70, and also presents a scheme for recording and reading information from a magnetic information carrier based on double MTJs. The paper shows that a magnetic information carrier based on MTJs has good prospects for use in autonomous control systems using artificial intelligence, and also highlights factors that affect the technical characteristics of information carriers of this type.
